Invention Grant
- Patent Title: Method of forming entangled inductor structures
-
Application No.: US17169118Application Date: 2021-02-05
-
Publication No.: US11545298B2Publication Date: 2023-01-03
- Inventor: Ka Fai Chang , Chin-Chou Liu , Fong-Yuan Chang , Hui Yu Lee , Yi-Kan Cheng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01F27/34 ; H01F27/28 ; H01F41/04 ; H01L49/02 ; H01L23/528 ; H01L23/522 ; H01L25/00 ; H01L25/065 ; H01L23/48

Abstract:
An entangled inductor structure generates opposite polarity internal magnetic fields therein to substantially reduce, or cancel, external magnetic fields propagating outside of the entangled inductor structure. These reduced external magnetic fields propagating outside of the entangled inductor structure effectively reduce a keep out zone (KOZ) between the entangled inductor structure and other electrical, mechanical, and/or electro-mechanical components. This allows the entangled inductor structure to be situated closer to these other electrical, mechanical, and/or electro-mechanical components within the IC as compared to conventional inductors which generate larger external magnetic fields.
Public/Granted literature
- US20210257156A1 ENTANGLED INDUCTOR STRUCTURES Public/Granted day:2021-08-19
Information query
IPC分类: