- Patent Title: Plasma parameters and skew characterization by high speed imaging
-
Application No.: US16940957Application Date: 2020-07-28
-
Publication No.: US11545376B2Publication Date: 2023-01-03
- Inventor: Sidharth Bhatia , Edward P. Hammond, IV , Bhaskar Kumar , Anup Kumar Singh , Vivek Bharat Shah , Ganesh Balasubramanian
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/67 ; H01L21/3065 ; G06T7/00
Abstract:
Embodiments of the present disclosure relate to a method and an apparatus for monitoring plasma behavior inside a plasma processing chamber. In one example, a method for monitoring plasma behavior includes acquiring at least one image of a plasma, and determining a plasma parameter based on the at least one image.
Information query
