Invention Grant
- Patent Title: Fan-out semiconductor package including under-bump metallurgy
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Application No.: US17225178Application Date: 2021-04-08
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Publication No.: US11545422B2Publication Date: 2023-01-03
- Inventor: Yonghwan Kwon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2020-0124619 20200925
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/498 ; H01L23/538 ; H01L25/18 ; H01L23/00

Abstract:
A fan-out semiconductor package includes: a support wiring structure including a support wiring conductive structure, a plurality of support wiring insulating layers including a first support wiring insulating layer having a recess area and a second support wiring insulating layer on the first support wiring insulating layer and enveloping the support wiring conductive structure, a pad layer enveloped by the second support wiring insulating layer and connected to the support wiring conductive structure, and an under-bump metallurgy (UBM) layer enveloped by the first support wiring insulating layer and connected to the pad layer; and a semiconductor chip on the support wiring structure, wherein the UBM layer includes a body portion and a protrusion protruding from the body portion and arranged in the recess area.
Public/Granted literature
- US20220102256A1 FAN-OUT SEMICONDUCTOR PACKAGE INCLUDING UNDER-BUMP METALLURGY Public/Granted day:2022-03-31
Information query
IPC分类: