Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device having first and second wires in different diameter
-
Application No.: US17108486Application Date: 2020-12-01
-
Publication No.: US11545460B2Publication Date: 2023-01-03
- Inventor: Takeyoshi Nishimura
- Applicant: Fuji Electric Co., Ltd.
- Applicant Address: JP Kanagawa
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP Kanagawa
- Agency: Chen Yoshimura LLP
- Priority: JPJP2020-003198 20200110
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A semiconductor device includes a semiconductor element having a surface electrode layer; a first wire that is electrically connected to the first main surface of the surface electrode layer at a plurality of first connecting portions and is arranged in a first direction on the first main surface; and a second wire that is electrically connected to the first main surface of the surface electrode layer at a second connecting portion and is arranged in a second direction on the first main surface, wherein a second circle equivalent diameter, which is a diameter of a circle having a same cross-sectional area as the second wire, is larger than a first circle equivalent diameter, which is a diameter of a circle having a same cross-sectional area as the first wire.
Public/Granted literature
- US20210217723A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-07-15
Information query
IPC分类: