Invention Grant
- Patent Title: Nanosheet (NS) and fin field-effect transistor (FinFET) hybrid integration
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Application No.: US16712222Application Date: 2019-12-12
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Publication No.: US11545483B2Publication Date: 2023-01-03
- Inventor: Xia Li , Haining Yang , Bin Yang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Patterson + Sheridan, L.L.P.
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/04 ; H01L29/06 ; H01L29/66 ; H01L21/8238 ; H01L21/762 ; H01L29/78
Abstract:
Certain aspects of the present disclosure are directed to a semiconductor device. The semiconductor device generally includes a substrate, at least one silicon-on-insulator (SOI) transistor disposed above the substrate, a gate-all-around (GAA) transistor disposed above the substrate, and a fin field-effect transistor (FinFET) disposed above the substrate.
Public/Granted literature
- US20210183852A1 NANOSHEET (NS) AND FIN FIELD-EFFECT TRANSISTOR (FINFET) HYBRID INTEGRATION Public/Granted day:2021-06-17
Information query
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