Invention Grant
- Patent Title: Semiconductor device and method
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Application No.: US16917473Application Date: 2020-06-30
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Publication No.: US11545546B2Publication Date: 2023-01-03
- Inventor: Yu-Lien Huang , Guan-Ren Wang , Ching-Feng Fu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/11 ; H01L27/092 ; H01L29/08 ; H01L29/417 ; H01L21/764 ; H01L21/8238

Abstract:
In an embodiment, a device includes: a first source/drain region; a second source/drain region; an inter-layer dielectric (ILD) layer over the first source/drain region and the second source/drain region; a first source/drain contact extending through the ILD layer, the first source/drain contact connected to the first source/drain region; a second source/drain contact extending through the ILD layer, the second source/drain contact connected to the second source/drain region; and an isolation feature between the first source/drain contact and the second source/drain contact, the isolation feature including a dielectric liner and a void, the dielectric liner surrounding the void.
Public/Granted literature
- US20210408231A1 Semiconductor Device and Method Public/Granted day:2021-12-30
Information query
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