Invention Grant
- Patent Title: Methods for forming fluorine doped high electron mobility transistor (HEMT) devices
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Application No.: US16997029Application Date: 2020-08-19
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Publication No.: US11545567B2Publication Date: 2023-01-03
- Inventor: Chih-Yen Chen
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: Vanguard International Semiconductor Corporation
- Current Assignee: Vanguard International Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/205 ; H01L21/225 ; H01L29/66 ; H01L21/306 ; H01L21/324 ; H01L29/06
Abstract:
A semiconductor device includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a source/drain pair, a fluorinated region, and a gate. The channel layer is disposed over the substrate. The barrier layer is disposed over the channel layer. The compound semiconductor layer is disposed over the barrier layer. The source/drain pair is disposed over the substrate, wherein the source and the drain are located on opposite sides of the compound semiconductor layer. The fluorinated region is disposed in the compound semiconductor layer. The gate is disposed on the compound semiconductor layer.
Public/Granted literature
- US20200381544A1 SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME Public/Granted day:2020-12-03
Information query
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