Invention Grant
- Patent Title: FBAR structure having single crystalline piezoelectric layer and fabricating method thereof
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Application No.: US17649476Application Date: 2022-01-31
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Publication No.: US11545958B2Publication Date: 2023-01-03
- Inventor: Jian Wang
- Applicant: Shenzhen Newsonic Technologies Co., Ltd.
- Applicant Address: CN Shenzhen
- Assignee: Shenzhen Newsonic Technologies Co., Ltd.
- Current Assignee: Shenzhen Newsonic Technologies Co., Ltd.
- Current Assignee Address: CN Shenzhen
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Main IPC: H03H9/17
- IPC: H03H9/17 ; H03H3/02 ; H03H9/02 ; H03H9/13
Abstract:
A film bulk acoustic resonator (FBAR) structure includes a bottom cap wafer, a piezoelectric layer disposed on the bottom cap wafer, the piezoelectric layer including a single crystalline piezoelectric material, a bottom electrode disposed below the piezoelectric layer; a top electrode disposed above the piezoelectric layer; and a cavity disposed below the bottom electrode.
Public/Granted literature
- US20220158617A1 FBAR STRUCTURE HAVING SINGLE CRYSTALLINE PIEZOELECTRIC LAYER AND FABRICATING METHOD THEREOF Public/Granted day:2022-05-19
Information query
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