Invention Grant
- Patent Title: Current detection circuit, current detection method, and semiconductor module
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Application No.: US16916075Application Date: 2020-06-29
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Publication No.: US11545970B2Publication Date: 2023-01-03
- Inventor: Kazumi Takagiwa
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JPJP2019-124319 20190703
- Main IPC: H03K17/0812
- IPC: H03K17/0812 ; H03K17/567 ; G01R19/165 ; H02M1/32 ; H03K5/24 ; G01R19/00 ; G01R19/15 ; H02M1/00

Abstract:
There is provide a current detection circuit including: a current detection unit that detects a control current flowing between a control terminal of a semiconductor element of voltage-controlled type having a current detection terminal, and a drive circuit; an overcurrent detection unit that detects an overcurrent in response to a sense current exceeding an overcurrent threshold value, the sense current flowing through the current detection terminal; and an adjustment unit that sets, based on a detection result of the current detection unit, the overcurrent threshold value in a transient period during turn on and turn off of the semiconductor element to be higher than the overcurrent threshold value in a period other than the transient period.
Public/Granted literature
- US20210006242A1 CURRENT DETECTION CIRCUIT, CURRENT DETECTION METHOD, AND SEMICONDUCTOR MODULE Public/Granted day:2021-01-07
Information query
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