Invention Grant
- Patent Title: Dense composite material, method for producing the same, joined body, and member for semiconductor manufacturing device
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Application No.: US17153001Application Date: 2021-01-20
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Publication No.: US11548829B2Publication Date: 2023-01-10
- Inventor: Asumi Nagai , Noboru Nishimura , Hirofumi Yamaguchi
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Nagoya
- Assignee: NGK INSULATORS, LTD.
- Current Assignee: NGK INSULATORS, LTD.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JPJP2020-012343 20200129
- Main IPC: C04B35/58
- IPC: C04B35/58 ; C04B35/575 ; C04B35/56 ; H01L21/683 ; C04B35/645 ; C04B37/00

Abstract:
According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 μm or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.
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