Invention Grant
- Patent Title: Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process
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Application No.: US16417909Application Date: 2019-05-21
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Publication No.: US11548844B2Publication Date: 2023-01-10
- Inventor: Daisuke Domon , Masayoshi Sagehashi , Masaaki Kotake , Naoya Inoue , Keiichi Masunaga , Satoshi Watanabe
- Applicant: Shin-Etsu Chemical Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: WHDA, LLP
- Priority: JPJP2018-100615 20180525
- Main IPC: G03F7/038
- IPC: G03F7/038 ; G03F7/20 ; G03F7/16 ; G03F7/32 ; G03F7/38 ; G03F1/20 ; G03F1/22 ; C07C33/30 ; C07C69/54 ; C08F220/30 ; G03F1/60 ; C08F212/14 ; C08F220/28
Abstract:
A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.
Information query
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