Methods of forming a shear-mode chemical/physical sensor for liquid environment sensing on V-shaped grooves of a [100] crystal orientation Si layer and the resulting devices are provided. Embodiments include forming a set of V-shaped grooves in a [100] Si layer over a substrate; forming an acoustic resonator over and along the V-shaped grooves, the acoustic resonator including a first metal layer, a thin-film piezoelectric layer, and a second metal layer in an IDT pattern or a sheet; and forming at least one functional layer along a slope of the acoustic resonator.