Invention Grant
- Patent Title: BMS semiconductor device having leakage current detection function and leakage current detection method thereof
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Application No.: US17084988Application Date: 2020-10-30
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Publication No.: US11549992B2Publication Date: 2023-01-10
- Inventor: Seulkirom Kim
- Applicant: HYUNDAI MOBIS CO., LTD.
- Applicant Address: KR Seoul
- Assignee: HYUNDAI MOBIS CO., LTD.
- Current Assignee: HYUNDAI MOBIS CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Morgan, Lewis & Bockius LLP
- Priority: KR10-2019-0140176 20191105
- Main IPC: G01R31/52
- IPC: G01R31/52 ; G01R31/3842 ; H02J7/00

Abstract:
A Battery Management System (BMS) semiconductor device having a leakage current detection function, may include: a comparator configured to compare a voltage of a balancing terminal connected to a positive voltage terminal of a battery cell and a voltage of a lower sensing terminal connected to a negative voltage terminal of the battery cell and output a result of the comparing; an ADC connected to the upper sensing terminal and the lower sensing terminal and configured to sense a voltage difference between the upper sensing terminal connected to the positive voltage terminal of the battery cell and the lower sensing terminal; and a leakage current determining unit connected to the ADC and the comparator and configured to set a variable threshold value according to the difference value sensed by the ADC and determine whether a leakage current is generated by using the result of the comparing in the comparator and the variable threshold value.
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