Invention Grant
- Patent Title: Backside etch process for transparent silicon oxide technology
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Application No.: US16868306Application Date: 2020-05-06
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Publication No.: US11550140B2Publication Date: 2023-01-10
- Inventor: Jacob Becker , Jon Burnsed
- Applicant: L3Harris Technologies, Inc.
- Applicant Address: US FL Melbourne
- Assignee: L3Harris Technologies, Inc.
- Current Assignee: L3Harris Technologies, Inc.
- Current Assignee Address: US FL Melbourne
- Agency: Workman Nydegger
- Main IPC: G02B23/12
- IPC: G02B23/12 ; G02B27/01 ; H01L27/32 ; H01L51/56 ; H01L51/00
Abstract:
Increasing transparency of one or more micro-displays. A method includes attaching a transparent cover to at least a portion of a semiconductor wafer. The at least a portion of the semiconductor wafer includes the one or more micro-displays. The one or more micro-displays include one or more active silicon areas. The method further includes, after the transparent cover has been attached to the at least a portion of the semiconductor wafer, removing silicon between one or more of the active silicon areas.
Public/Granted literature
- US20210349301A1 BACKSIDE ETCH PROCESS FOR TRANSPARENT SILICON OXIDE TECHNOLOGY Public/Granted day:2021-11-11
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