Invention Grant
- Patent Title: Negative tone photoresist for EUV lithography
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Application No.: US16810002Application Date: 2020-03-05
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Publication No.: US11550220B2Publication Date: 2023-01-10
- Inventor: Li-Po Yang , Wei-Han Lai , Ching-Yu Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G03F7/038
- IPC: G03F7/038 ; G03F7/20 ; G03F7/30 ; G03F7/16
Abstract:
A negative tone photoresist and method for developing the negative tone photoresist is disclosed. For example, the negative tone photoresist includes a solvent, a dissolution inhibitor, and a polymer. The polymer includes a hydroxyl group. The polymer may be greater than 40 weight per cent of a total weight of the negative tone photoresist.
Public/Granted literature
- US20210132497A1 NEGATIVE TONE PHOTORESIST FOR EUV LITHOGRAPHY Public/Granted day:2021-05-06
Information query
IPC分类:
