Invention Grant
- Patent Title: Error correction of memory
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Application No.: US17326889Application Date: 2021-05-21
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Publication No.: US11550661B2Publication Date: 2023-01-10
- Inventor: Eun Hyup Doh , Man Keun Kang
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2021-0005143 20210114
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G06F3/06

Abstract:
A memory includes: a data receiving circuit suitable for receiving a data during a write operation; a data rotation circuit suitable for changing an order of the data transferred from the data receiving circuit and outputting the data whose order is changed in response to an address during the write operation; an error correction code generation circuit suitable for generating an error correction code based on the data output from the data rotation circuit during the write operation; and a memory core suitable for storing the data received by the data receiving circuit and the error correction code during the write operation.
Public/Granted literature
- US20220229726A1 ERROR CORRECTION OF MEMORY Public/Granted day:2022-07-21
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