Invention Grant
- Patent Title: Semiconductor device including a content reference memory
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Application No.: US17318632Application Date: 2021-05-12
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Publication No.: US11551755B2Publication Date: 2023-01-10
- Inventor: Makoto Yabuuchi
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2020-095806 20200601
- Main IPC: G11C15/00
- IPC: G11C15/00 ; G11C15/04 ; G11C8/08 ; G11C7/12 ; G11C7/06

Abstract:
A semiconductor device includes a plurality of memory cells connected to a match line; a word line driver connected to a word line; a valid cell configured to store a valid bit indicating valid or invalid of an entry; a first precharge circuit connected to one end of the match line and configured to precharge the match line to a high level; and a second precharge circuit connected to the other end of the match line and configured to precharge the match line to a high level. The plurality of memory cells are arranged between the first precharge circuit and the second precharge circuit, and the second precharge circuit is arranged between the word line driver and the plurality of memory cells.
Public/Granted literature
- US20210375362A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-12-02
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