Invention Grant
- Patent Title: Memory device and operating method thereof
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Application No.: US16950197Application Date: 2020-11-17
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Publication No.: US11551766B2Publication Date: 2023-01-10
- Inventor: Jang Seob Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2020-0048045 20200421
- Main IPC: G11C16/28
- IPC: G11C16/28 ; G11C16/08 ; G11C16/30 ; G11C16/10

Abstract:
A memory device includes: one or more planes each including a plurality of memory blocks; and a control circuit for selectively performing a dummy read operation before a valid read operation on the first memory block, according to whether a read command on the first memory block is firstly received from a host after a program operation is performed on a plane including the first memory block.
Public/Granted literature
- US20210327516A1 MEMORY DEVICE AND OPERATING METHOD THEREOF Public/Granted day:2021-10-21
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