Invention Grant
- Patent Title: Ultra-localized and plasma uniformity control in a plasma processing system
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Application No.: US15723005Application Date: 2017-10-02
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Publication No.: US11551909B2Publication Date: 2023-01-10
- Inventor: Barton G. Lane , Peter L. G. Ventzek
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/67 ; H01L21/683
Abstract:
Described herein are architectures, platforms and methods for providing localized high density plasma sources igniting local gasses during a wafer fabrication process to provide global uniformity. Such plasma sources are resonant structures operating at radio frequencies at or higher than microwave values.
Public/Granted literature
- US20190103254A1 ULTRA-LOCALIZED AND PLASMA UNIFORMITY CONTROL IN A FABRICATION PROCESS Public/Granted day:2019-04-04
Information query
