Invention Grant
- Patent Title: Method of polishing silicon wafer including notch polishing process and method of producing silicon wafer
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Application No.: US16467273Application Date: 2017-09-22
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Publication No.: US11551922B2Publication Date: 2023-01-10
- Inventor: Tsuyoshi Morita
- Applicant: SUMCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SUMCO CORPORATION
- Current Assignee: SUMCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JPJP2016-246938 20161220
- International Application: PCT/JP2017/034346 WO 20170922
- International Announcement: WO2018/116558 WO 20180628
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B24B9/06 ; B24B37/08 ; C30B15/00 ; C30B29/06 ; H01L21/67
Abstract:
Provided are a method of polishing a silicon wafer and a method of producing a silicon wafer which can reduce the formation of step-forming microdefects on a silicon wafer. The method includes: a double-side polishing step of performing polishing on front and back surfaces of a silicon wafer; a notch portion polishing step of performing polishing on a beveled portion of a notch portion of the silicon wafer after the double-side polishing step; a peripheral beveled portion polishing step of performing polishing on the beveled portion on the periphery of the silicon wafer other than the beveled portion of the notch portion after the notch portion polishing step; and a finish polishing step of performing finish polishing on the front surface of the silicon wafer after the peripheral beveled portion polishing step. The notch portion polishing step is performed in a state where the front surface is wet with water.
Information query
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