According to one embodiment of the present disclosure, there is provided a substrate processing method including: providing a substrate; forming a seed layer on a surface of the substrate by heating a stage on which the substrate is placed to a first temperature and supplying a first source gas to the substrate; and forming a metal-containing film by heating the stage on which the substrate is placed to a second temperature and supplying a second source gas and a first reducing gas to the substrate on which the seed layer is formed.