Invention Grant
- Patent Title: Contact plug structure and manufacturing method thereof
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Application No.: US17235904Application Date: 2021-04-20
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Publication No.: US11551971B2Publication Date: 2023-01-10
- Inventor: An-Chi Liu , Yi-Wang Jhan
- Applicant: Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: CN Quanzhou
- Assignee: Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: CN Quanzhou
- Agent Winston Hsu
- Priority: CN202010688657.7 20200716,CN202021410397.9 20200716
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L29/40 ; H01L29/417 ; H01L23/522 ; H01L23/532 ; H01L21/306

Abstract:
The invention provides a contact plug structure. The contact plug structure comprises a substrate and a dielectric layer, and a first contact hole located in the dielectric layer and penetrating into the substrate, the first contact hole has a first through hole portion located in the dielectric layer and a first groove located in the substrate, and the first through hole portion is communicated with the first groove, the maximum width of the first groove is larger than that of the first through hole portion in the direction parallel to the substrate surface. A barrier layer at least partially covering the sidewall of the first groove. A conductive pad layer is located on the bottom surface of the first groove. The conductive core layer is arranged on the conductive pad layer, and the barrier layer wraps the conductive pad layer and the conductive core layer.
Public/Granted literature
- US20220020639A1 Contact plug structure and manufacturing method thereof Public/Granted day:2022-01-20
Information query
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