- Patent Title: Semiconductor device manufacturing method and semiconductor device
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Application No.: US17189117Application Date: 2021-03-01
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Publication No.: US11551973B2Publication Date: 2023-01-10
- Inventor: Takanobu Ono , Keisuke Tokubuchi , Akira Tomono
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JPJP2020-138825 20200819
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L23/00 ; H01L25/18 ; H01L23/538
Abstract:
A method for manufacturing a semiconductor device includes providing an adhesive film over a first surface of a semiconductor wafer on which a semiconductor device layer and a bump electrically connected to the semiconductor device layer are formed, forming a slit in the adhesive film, fragmenting the semiconductor wafer into semiconductor chips along the slit, and connecting the bump to a wiring of a circuit board within the adhesive film.
Public/Granted literature
- US20220059407A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE Public/Granted day:2022-02-24
Information query
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