Invention Grant
- Patent Title: Substrate comprising a high-density interconnect portion embedded in a core layer
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Application No.: US16900672Application Date: 2020-06-12
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Publication No.: US11552015B2Publication Date: 2023-01-10
- Inventor: Aniket Patil , Hong Bok We , Kuiwon Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/00 ; H01L27/146 ; H01L39/24 ; H01L21/768

Abstract:
A substrate that includes a core layer comprising a first surface and a second surface, a plurality of core interconnects located in the core layer, a high-density interconnect portion located in the core layer, a first dielectric layer coupled to the first surface of the core layer, a first plurality of interconnects located in the first dielectric layer, a second dielectric layer coupled to the second surface of the core layer, and a second plurality of interconnects located in the second dielectric layer. The high-density interconnect portion includes a first redistribution dielectric layer and a first plurality of high-density interconnects located in the first redistribution dielectric layer. The high-density interconnect portion may provide high-density interconnects.
Public/Granted literature
- US20210391247A1 SUBSTRATE COMPRISING A HIGH-DENSITY INTERCONNECT PORTION EMBEDDED IN A CORE LAYER Public/Granted day:2021-12-16
Information query
IPC分类: