Invention Grant
- Patent Title: Semiconductor devices with reinforced substrates
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Application No.: US17013321Application Date: 2020-09-04
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Publication No.: US11552029B2Publication Date: 2023-01-10
- Inventor: Koustav Sinha , Shams U. Arifeen , Christopher Glancey
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/16 ; H01L21/48 ; H01L23/498 ; H01L23/31

Abstract:
Semiconductor devices having reinforcement structures configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a semiconductor die and a substrate coupled to the semiconductor die. The substrate can include a base structure and a reinforcement structure at least partially within a die shadow region of the substrate. The reinforcement structure can be at least partially surrounded by the base structure. The reinforcement structure has a higher stiffness than the base structure.
Public/Granted literature
- US20220077076A1 SEMICONDUCTOR DEVICES WITH REINFORCED SUBSTRATES Public/Granted day:2022-03-10
Information query
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