Invention Grant
- Patent Title: Semiconductor device including an electrical contact with a metal layer arranged thereon
-
Application No.: US17101339Application Date: 2020-11-23
-
Publication No.: US11552048B2Publication Date: 2023-01-10
- Inventor: Oliver Hellmund , Barbara Eichinger , Thorsten Meyer , Ingo Muri
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102019132230.8 20191128
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/00 ; H01L21/78

Abstract:
A semiconductor device includes a semiconductor die, an electrical contact arranged on a surface of the semiconductor die, and a metal layer arranged on the electrical contact, wherein the metal layer includes a singulated part of at least one of a metal foil, a metal sheet, a metal leadframe, or a metal plate. When viewed in a direction perpendicular to the surface of the semiconductor die, a footprint of the electrical contact and a footprint of the metal layer are substantially congruent.
Public/Granted literature
- US20210167036A1 SEMICONDUCTOR DEVICE INCLUDING AN ELECTRICAL CONTACT WITH A METAL LAYER ARRANGED THEREON Public/Granted day:2021-06-03
Information query
IPC分类: