Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17004182Application Date: 2020-08-27
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Publication No.: US11552065B2Publication Date: 2023-01-10
- Inventor: Bin Wan Mat Wan Azha
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Agency: Rabin & Berdo, P.C.
- Priority: JPJP2019-166509 20190912
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L23/00 ; H01L23/498

Abstract:
A semiconductor device, having a substrate including an insulating plate and a circuit board provided on a front surface of the insulating plate. The circuit board has a first disposition area and a second disposition area with a gap therebetween, and a groove portion, of which a longitudinal direction is parallel to the gap, formed in the gap. The semiconductor device further includes a first semiconductor chip and a second semiconductor chip located on the circuit board in the first disposition area and the second disposition area, respectively, and a blocking member located in the gap across the groove portion in parallel to the longitudinal direction in a plan view of the semiconductor device.
Public/Granted literature
- US20210082898A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-03-18
Information query
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