Invention Grant
- Patent Title: Semiconductor discharge protection device with diode and silicon controlled rectifier arrangements
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Application No.: US16941889Application Date: 2020-07-29
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Publication No.: US11552071B2Publication Date: 2023-01-10
- Inventor: Ming-Feng Hsieh , Chih-Chun Lin , Zhihao Pan
- Applicant: Littelfuse Semiconductor (Wuxi) Co., Ltd.
- Applicant Address: CN Wuxi
- Assignee: Littelfuse Semiconductor (Wuxi) Co., Ltd.
- Current Assignee: Littelfuse Semiconductor (Wuxi) Co., Ltd.
- Current Assignee Address: CN Wuxi
- Agency: KDB Firm PLLC
- Priority: CN201910692287.1 20190729
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L21/8222 ; H01L29/74 ; H01L27/06
Abstract:
Aspects of the present disclosure include one or more semiconductor electrostatic discharge protection devices. At least one embodiment includes a semiconductor electrostatic discharge device with one or more fingers divided into two segments with alternating p-diffusion and n-diffusion regions, with each region being associated with at least one of a portion of a diode and/or silicon-controlled rectifier (SCR).
Public/Granted literature
- US20210035970A1 SEMICONDUCTOR DISCHARGE PROTECTION DEVICE WITH DIODE AND SILICON CONTROLLED RECTIFIER ARRANGEMENTS Public/Granted day:2021-02-04
Information query
IPC分类:
