Invention Grant
- Patent Title: Semiconductor memory device and manufacturing method thereof
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Application No.: US17647743Application Date: 2022-01-12
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Publication No.: US11552092B1Publication Date: 2023-01-10
- Inventor: Kui Zhang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN202110772365.6 20210708
- Main IPC: H01L27/1156
- IPC: H01L27/1156 ; H01L27/11556 ; H01L27/11521 ; H01L27/11568 ; H01L27/11582
Abstract:
The present disclosure provides a semiconductor memory device and a manufacturing method thereof, and relates to the technical field of semiconductors. The semiconductor memory device includes a substrate, a source structure, a laminated structure, a floating body, a trench region, a drain structure and a gate structure. The source structure is formed on the substrate. The laminated structure includes a nitride layer and an oxide layer that are alternately laminated on the source structure. The floating body is formed in the oxide layer, and a through hole is formed in the floating body along a lamination direction of the laminated structure. The trench region is formed inside the floating body, a through hole is also formed in the trench region along the lamination direction, and the trench region is in contact with the source structure.
Public/Granted literature
- US20230007879A1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2023-01-12
Information query
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