A memory device may be provided. The memory device may include a substrate, wherein the substrate includes a well having a first conductivity type. The memory device may further include a contact element arranged in the well and including a first contact having the first conductivity type; a diode layer arranged in the well and having a second conductivity type opposite to the first conductivity type; and a dummy gate configured to isolate the first contact from the diode layer. The memory device may further include a memory element electrically connected to the diode layer.