Invention Grant
- Patent Title: Semiconductor devices and methods of manufacturing thereof
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Application No.: US17230414Application Date: 2021-04-14
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Publication No.: US11552195B2Publication Date: 2023-01-10
- Inventor: Shih-Yao Lin , Hsiao Wen Lee , Li-Jung Kuo , Chen-Ping Chen , Ming-Ching Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Foley & Lardner LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L29/78 ; H01L29/06 ; H01L21/8234 ; H01L29/66
Abstract:
A semiconductor device in a first area includes first non-planar semiconductor structures separated with a first distance, and a first isolation region including a first layer and a second layer that collectively embed a lower portion of each of the first non-planar semiconductor structures. At least one of the first layer or second layer of the first isolation region is in a cured state. The semiconductor device in a second area includes second non-planar semiconductor structures separated with a second distance, and a second isolation region including a first layer and a second layer that collectively embed a lower portion of each of the second non-planar semiconductor structures. At least one of the first or second layer of the second isolation region is in a cured state.
Public/Granted literature
- US20220336662A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF Public/Granted day:2022-10-20
Information query
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