Invention Grant
- Patent Title: Photoconductive semiconductor switch assembly utilizing a resonant cavity
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Application No.: US17136516Application Date: 2020-12-29
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Publication No.: US11552203B2Publication Date: 2023-01-10
- Inventor: Joseph D. Teague , Katherine A. Sheets
- Applicant: Government of the United States, as represented by the Secretary of the Air Force
- Applicant Address: US OH Wright-Patterson
- Assignee: Government of the United States, as represented by the Secretary of the Air Force
- Current Assignee: Government of the United States, as represented by the Secretary of the Air Force
- Current Assignee Address: US OH Wright-Patterson
- Agency: AFMCLO/JAZ
- Agent Timothy M. Barlow
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L31/09 ; H01L51/52 ; C30B7/10

Abstract:
A PCSS comprises a photoconductive semiconductor block that exhibits electrically-conductive behavior when exposed to light of a predetermined wavelength; two or more electrodes fixed to the photoconductive semiconductor block and connectable to a power supply; a resonance cavity enveloping the photoconductive semiconductor block, the resonance cavity having a reflective outer surface to trap light within the resonance cavity and the photoconductive semiconductor block, the resonance cavity having a window through the reflective outer surface to admit light of the predetermined wavelength, the resonance cavity being transmissive to light of the predetermined wavelength within the reflective outer surface; and a light source directed toward the photoconductive semiconductor block and through the window, and emitting light at the predetermined wavelength. The photoconductive semiconductor block may include Si, GaAs, GaN, AlN, SiC, and/or Ga2O3. The resonance cavity may include glass, crystal, Au, Ag, Cr, Ni, V, Pd, Pt, Ir, Rh, and/or Al.
Public/Granted literature
- US20220209028A1 PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH ASSEMBLY UTILIZING A RESONANT CAVITY Public/Granted day:2022-06-30
Information query
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