Invention Grant
- Patent Title: Gate drive apparatus and method thereof
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Application No.: US17457141Application Date: 2021-12-01
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Publication No.: US11552632B1Publication Date: 2023-01-10
- Inventor: Junxiao Chen , Yingying Yang
- Applicant: NuVolta Technologies (Hefei) Co., Ltd.
- Applicant Address: CN Hefei
- Assignee: NuVolta Technologies (Hefei) Co., Ltd.
- Current Assignee: NuVolta Technologies (Hefei) Co., Ltd.
- Current Assignee Address: CN Hefei
- Agency: Slater Matsil, LLP
- Priority: CN202111383352.6 20211122
- Main IPC: H03K5/12
- IPC: H03K5/12 ; H03K17/16
Abstract:
A method includes detecting a signal on a switching node connected to a power switch, detecting a gate drive voltage of the power switch, during a gate drive process of the power switch, reducing a gate drive current based on a first comparison result obtained from comparing the signal with a first threshold, and during the gate drive process of the power switch, increasing the gate drive current based on a second comparison result obtained from comparing the gate drive voltage with a second threshold.
Information query
IPC分类:
