A method includes writing, to a first sub-set of memory blocks of a first plane associated with a memory device, first data corresponding to recovery of an uncorrectable error and writing, to a first sub-set of memory blocks of a second memory plane associated with the memory device, second data corresponding to recovery of the uncorrectable error. A relative physical location of the first sub-set of memory blocks of the first memory plane and a relative physical location of the first sub-set of memory blocks of the second memory plane are a same relative physical location with respect to the first memory plane and the second memory plane.