Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus
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Application No.: US16830879Application Date: 2020-03-26
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Publication No.: US11557498B2Publication Date: 2023-01-17
- Inventor: Toru Takahashi , Hiroshi Tsujimoto , Nobuaki Shindo , Shigeru Yoneda
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JPJP2019-066999 20190329
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L21/66 ; H01J37/32 ; H01L21/3065
Abstract:
A method of processing a substrate includes: a placement step of placing the substrate on an electrostatic chuck set to have a predetermined temperature; a first attraction step of attracting the substrate onto the electrostatic chuck by applying a first direct current (DC) voltage to the electrostatic chuck; a holding step of holding the attraction of the substrate by the electrostatic chuck while applying the first DC voltage to the electrostatic chuck, until a temperature difference between the electrostatic chuck and the substrate becomes 30 degrees C. or less; and a second attraction step of attracting the substrate onto the electrostatic chuck by applying a second DC voltage, which is higher than the first DC voltage, to the electrostatic chuck.
Public/Granted literature
- US11538707B2 Substrate processing method and substrate processing apparatus Public/Granted day:2022-12-27
Information query
IPC分类:
