Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
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Application No.: US16991732Application Date: 2020-08-12
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Publication No.: US11557514B2Publication Date: 2023-01-17
- Inventor: Tiantian Zhang , Jingjing Tan
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai; CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai; CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201910786558.X 20190823
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/285 ; H01L23/522 ; H01L23/532
Abstract:
Semiconductor device and fabrication method are provided. The method for forming the semiconductor device includes providing a substrate; forming a dielectric layer on the substrate; forming a through hole in the dielectric layer, the through hole exposing a portion of a top surface of the substrate; performing a surface treatment process on the dielectric layer of sidewalls of the through hole; and filling a metal layer in the through hole.
Public/Granted literature
- US20210057272A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2021-02-25
Information query
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