Invention Grant
- Patent Title: Semiconductor device and method of manufacturing radiation fin
-
Application No.: US17002946Application Date: 2020-08-26
-
Publication No.: US11557527B2Publication Date: 2023-01-17
- Inventor: Hiroto Yamashita
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2019-213339 20191126
- Main IPC: H01L23/40
- IPC: H01L23/40 ; H01L21/48

Abstract:
An object is to provide a technique capable of suppressing reduction in sticking force of a semiconductor package and a radiation fin in a semiconductor device including the semiconductor package and the radiation fin when the semiconductor package and the radiation fin stick and are fixed to each other by magnetic force. A semiconductor device includes: a semiconductor package; an insulating substrate; a radiation fin; a first fixed part made up of one of a magnetic body and a bond magnet integrally formed with the semiconductor package; and a second fixed part made up of another one of the magnetic body and the bond magnet integrally formed with the radiation fin, wherein the semiconductor package and the radiation fin stick to each other by magnetic force occurring between the first fixed part and the second fixed part.
Public/Granted literature
- US20210159145A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING RADIATION FIN Public/Granted day:2021-05-27
Information query
IPC分类: