Invention Grant
- Patent Title: Semiconductor device with metal film, power conversion device with the semiconductor device, and method of manufacturing the semiconductor device
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Application No.: US17264945Application Date: 2019-09-24
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Publication No.: US11557531B2Publication Date: 2023-01-17
- Inventor: Shohei Ogawa , Junji Fujino , Yusuke Ishiyama , Isao Oshima , Takumi Shigemoto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: JPJP2018-180154 20180926
- International Application: PCT/JP2019/037368 WO 20190924
- International Announcement: WO2020/067059 WO 20200402
- Main IPC: H01L21/50
- IPC: H01L21/50 ; H01L23/495 ; H01L23/498 ; H01L23/00 ; H01L21/60
Abstract:
A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.
Public/Granted literature
- US20210313253A1 SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-10-07
Information query
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