Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17004244Application Date: 2020-08-27
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Publication No.: US11557540B2Publication Date: 2023-01-17
- Inventor: Hitoshi Ishii
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JPJP2020-045222 20200316
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/00 ; H01L25/065

Abstract:
A semiconductor device having a substrate, a semiconductor chip, and a plurality of electrode terminals is provided. The substrate has first and second principal surfaces. The semiconductor chip is disposed on the first principal surface. The electrode terminals are disposed on the second principal surface. The substrate has a via interconnection near a position at which an outer edge line of the semiconductor chip intersects an outer outline of the electrode terminal farthest from a center of the substrate, the electrode terminal farthest from the center of the substrate being among the plurality of electrode terminals overlapping the outer edge line in a predetermined condition as seen through the substrate of the semiconductor device from a direction perpendicular to the first principal surface, the via interconnection connecting a first interconnection layer on a first principal surface-side to a second interconnection layer on a second principal surface-side.
Public/Granted literature
- US20210287992A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-09-16
Information query
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