Invention Grant
- Patent Title: Semiconductor device having a translation feature and method therefor
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Application No.: US17004425Application Date: 2020-08-27
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Publication No.: US11557544B2Publication Date: 2023-01-17
- Inventor: Michael B. Vincent , Giorgio Carluccio , Scott M. Hayes
- Applicant: NXP USA, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01Q1/22 ; H01Q21/06 ; H01L23/498 ; H01Q1/32 ; H01Q15/14 ; H01L23/31
Abstract:
A semiconductor device is provided. The device includes a semiconductor die and a launcher structure attached to a package substrate. The launcher structure includes a launcher substrate, a launcher portion formed from a conductive layer at a major surface of the launcher substrate, and a translation pad formed from the conductive layer at the major surface. The translation pad is separate from the launcher portion. A translation feature is formed on the translation pad. The translation feature is configured for alignment of a waveguide structure.
Public/Granted literature
- US20220068828A1 SEMICONDUCTOR DEVICE HAVING A TRANSLATION FEATURE AND METHOD THEREFOR Public/Granted day:2022-03-03
Information query
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