Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15733890Application Date: 2019-04-08
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Publication No.: US11557564B2Publication Date: 2023-01-17
- Inventor: Soichiro Umeda , Atsushi Kyutoku
- Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Current Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Hauptman Ham, LLP
- International Application: PCT/JP2019/015295 WO 20190408
- International Announcement: WO2020/208677 WO 20201015
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A semiconductor device including a substrate; a chip on which a surface electrode is formed; and a lead. The lead includes a first electrode connecting portion disposed on the surface electrode and electrically connected to the surface electrode of the chip via a conductive bonding material; a second electrode connecting portion electrically connected to an electrode portion of a wiring pattern. A lead connected to the first electrode connecting portion and the second electrode connecting portion. The lead further has a thermal shrinking stress equalizing structure on a portion of an outer periphery of the first electrode connecting portion. The lead is configured to make a thermal shrinking stress applied to a conductive bonding material between the first electrode connecting portion and the surface electrode equal.
Public/Granted literature
- US20210217721A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-07-15
Information query
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