Invention Grant
- Patent Title: Semiconductor device, manufacturing method for semiconductor device, and electronic device
-
Application No.: US17324932Application Date: 2021-05-19
-
Publication No.: US11557573B2Publication Date: 2023-01-17
- Inventor: Satoru Wakiyama , Masaki Okamoto , Yutaka Ooka , Reijiroh Shohji , Yoshifumi Zaizen , Kazunori Nagahata , Masaki Haneda
- Applicant: Sony Group Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Group Corporation
- Current Assignee: Sony Group Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JP2012-147316 20120629,JP2013-024505 20130212
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L21/768 ; H01L27/146 ; H01L23/48 ; H01L21/306 ; H01L25/00 ; H01L21/311 ; H01L23/00
Abstract:
There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.
Public/Granted literature
- US20210272933A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE Public/Granted day:2021-09-02
Information query
IPC分类:
