A multi-transistor device includes first and second lateral double-diffused metal-oxide-semiconductor field effect (LDMOS) transistors sharing a first p-type reduced surface field (RESURF) layer and a first drain n+ region. In certain embodiments, the first LDMOS transistor includes a first drift region, the second LDMOS transistor includes a second drift region, and the first and second drift regions are at least partially separated by the first p-type RESURF layer in a thickness direction.