Invention Grant
- Patent Title: Image sensor and imaging device
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Application No.: US16955577Application Date: 2018-11-02
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Publication No.: US11557619B2Publication Date: 2023-01-17
- Inventor: Shinichiro Noudo
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Chip Law Group
- Priority: JPJP2017-249086 20171226
- International Application: PCT/JP2018/040877 WO 20181102
- International Announcement: WO2019/130820 WO 20190704
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
The incidence of incident light transmitted through a photoelectric conversion unit onto a charge holding unit, a pixel in the adjacency, and the like can be blocked in a pixel. An image sensor includes a pixel, a wiring layer, and an incident light attenuation unit. The pixel includes a photoelectric conversion unit that is formed in a semiconductor substrate and performs photoelectric conversion based on incident light, and a pixel circuit that generates an image signal according to a charge generated by the photoelectric conversion. The wiring layer is arranged on a surface of the semiconductor substrate different from a surface onto which the incident light is incident, and transports either the image signal or a signal applied to the pixel circuit. The incident light attenuation unit attenuates the incident light transmitted through the photoelectric conversion unit.
Public/Granted literature
- US20200321376A1 IMAGE SENSOR AND IMAGING DEVICE Public/Granted day:2020-10-08
Information query
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