Invention Grant
- Patent Title: Quantum dot structure having a barrier region and a trap region, radiation conversion element and light-emitting device
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Application No.: US16551651Application Date: 2019-08-26
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Publication No.: US11557686B2Publication Date: 2023-01-17
- Inventor: David O'Brien , Joseph Treadway
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/50 ; H01L33/56 ; H01L31/0352

Abstract:
A quantum dot structure, a radiation conversion element and a light emitting device are disclosed. In an embodiment a quantum dot structure includes an active region configured to emit radiation, a barrier region surrounding the active region and a trap region spaced apart from the active region, wherein a band edge of the trap region forms a trap configuration with respect to the barrier region for at least one type of charge carrier.
Public/Granted literature
- US20210066522A1 Quantum Dot Structure, Radiation Conversion Element and Light-Emitting Device Public/Granted day:2021-03-04
Information query
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