Invention Grant
- Patent Title: Semiconductor laser
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Application No.: US17056360Application Date: 2019-05-28
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Publication No.: US11557876B2Publication Date: 2023-01-17
- Inventor: Nikolaos-Panteleimon Diamantopoulos , Takaaki Kakitsuka , Shinji Matsuo
- Applicant: Nippon Telegraph and Telephone Corporation
- Applicant Address: JP Tokyo
- Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee Address: JP Tokyo
- Agency: Slater Matsil, LLP
- Priority: JPJP2018-103099 20180530
- International Application: PCT/JP2019/021066 WO 20190528
- International Announcement: WO2019/230712 WO 20191205
- Main IPC: H01S5/0625
- IPC: H01S5/0625 ; H01S5/062 ; H01S5/10 ; H01S5/12
Abstract:
A semiconductor laser is provided with: an active layer that excites a transverse electric (TE) mode and a transverse magnetic (TM) mode of light and constitutes at least a part of a resonator guiding the TE mode and the TM mode of light; and a diffraction grating as a frequency difference setting structure that sets the difference in oscillation frequency between the TE mode and the TM mode of light higher than a relaxation-oscillation frequency.
Public/Granted literature
- US20210184427A1 Semiconductor Laser Public/Granted day:2021-06-17
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