Invention Grant
- Patent Title: Bulk-acoustic wave resonator
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Application No.: US16875225Application Date: 2020-05-15
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Publication No.: US11558026B2Publication Date: 2023-01-17
- Inventor: Tae Kyung Lee , Sang Heon Han , Ran Hee Shin , Jin Suk Son
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2019-0128802 20191017
- Main IPC: H03H9/02
- IPC: H03H9/02 ; H03H9/17 ; H03H9/13

Abstract:
A bulk-acoustic wave resonator may include: a substrate; a resonator unit including a first electrode disposed on the substrate, a piezoelectric layer disposed on the first electrode, and a second electrode disposed on the piezoelectric layer; and a protective layer disposed on a surface of the resonator unit. The protective layer is formed of a diamond film, and a grain size of the diamond film is 50 nm or more.
Public/Granted literature
- US20210119599A1 BULK-ACOUSTIC WAVE RESONATOR Public/Granted day:2021-04-22
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