Invention Grant
- Patent Title: Nano-twinned copper layer with doped metal element, substrate comprising the same and method for preparing the same
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Application No.: US17321717Application Date: 2021-05-17
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Publication No.: US11560639B2Publication Date: 2023-01-24
- Inventor: Chih Chen , Kang-Ping Lee
- Applicant: NATIONAL YANG MING CHIAO TUNG UNIVERSITY
- Applicant Address: TW Hsinchu
- Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITY
- Current Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITY
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW11010795.3 20210305
- Main IPC: C25D3/38
- IPC: C25D3/38 ; C25D3/46 ; C25D7/12

Abstract:
A nano-twinned copper layer with a doped metal element is disclosed, wherein the nano-twinned copper is doped with at least one metal element selected from the group consisting of Ag, Ni, Al, Au, Pt, Mg, Ti, Zn, Pd, Mn and Cd in a region from a surface of the nano-twinned copper layer to a depth being 0.3 μm, and a content of the metal element in the region is ranged from 0.5 at % to 20 at %. In addition, at least 50% in volume of the nano-twinned copper layer includes plural twinned grains. Furthermore, a substrate including the aforesaid nano-twinned copper layer and a method for preparing the aforesaid nano-twinned copper layer are also disclosed.
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