Invention Grant
- Patent Title: EUV masks to prevent carbon contamination
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Application No.: US17532939Application Date: 2021-11-22
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Publication No.: US11561464B2Publication Date: 2023-01-24
- Inventor: Pei-Cheng Hsu , Ta-Cheng Lien , Hsin-Chang Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/22

Abstract:
An extreme ultra-violet mask includes a substrate, a multi-layered mirror layer, a capping layer, a first tantalum-containing oxide layer, a tantalum-containing nitride layer, and a second tantalum-containing oxide layer. The multi-layered mirror layer is over the substrate. The capping layer is over the multi-layered mirror layer. The first tantalum-containing oxide layer is over the capping layer. The tantalum-containing nitride layer is over the first tantalum-containing oxide layer. The second tantalum-containing oxide layer is over the tantalum-containing nitride layer.
Public/Granted literature
- US20220082928A1 EUV MASKS TO PREVENT CARBON CONTAMINATION Public/Granted day:2022-03-17
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