Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17463526Application Date: 2021-08-31
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Publication No.: US11562775B2Publication Date: 2023-01-24
- Inventor: Kenjiro Matoba
- Applicant: LAPIS Semiconductor Co., Ltd.
- Applicant Address: JP Yokohama
- Assignee: LAPIS Semiconductor Co., Ltd.
- Current Assignee: LAPIS Semiconductor Co., Ltd.
- Current Assignee Address: JP Yokohama
- Agency: JCIPRNET
- Priority: JPJP2019-057477 20190325
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/06 ; G11C7/22 ; G06F9/30

Abstract:
A semiconductor device including a FIFO circuit in which a data capacity can be increased while minimizing an increase in a circuit scale is provided. The semiconductor device includes a single-port type storage unit (11) which stores data, a flip-flop (12) which temporarily stores write data (FIFO input) or read data (FIFO output) of the storage unit (11), and a control unit (14, 40) which controls a write timing of a data signal, which is stored in the flip-flop (12), to the storage unit (11) or a read timing of the data signal from the storage unit to avoid an overlap between a write operation and a read operation in the storage unit (11).
Public/Granted literature
- US20210398570A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-12-23
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